Electron inelastic mean free paths and surface excitation parameters for GaAs

Electron inelastic mean free paths and surface excitation parameters for GaAs

Surface excitation parameters and inelastic mean free paths of electrons are of importance in the analyses of surface sensitive electron spectroscopies. When probe electrons are near the surface of a solid or the interface of an overlayer system, electron inelastic mean free paths become depth-dependent. These mean free paths and surface excitation parameters were calculated for electrons cross...

Measurements of electron inelastic mean free paths in materials.

We present a method for determining inelastic mean free paths (IMFPs) in materials using high-accuracy measurements of x-ray absorption fine structure (XAFS). For electron energies below 100 eV, theoretical predictions have large variability and alternate measurement techniques exhibit significant uncertainties. In this regime, the short IMFP makes photoelectrons ideal for structural determinat...

Electron mean free paths in the alkali metals.

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs shells is an effective means of obtaining exceptionally high carrier mobilities and lifetimes. We performed measurements of GaAs/AlGaAs core-s...

Inelastic and elastic mean free paths from FIB samples of metallic glasses.

We have used focused ion beam (FIB) milling and scanning electron microscopy (SEM) to prepare samples of known thickness for measurement of the electron scattering elastic and inelastic mean free paths (EMFP and IMFP respectively) of three metallic glasses, Cu(64.5)Zr(35.5), Zr(50)Cu(45)Al(5), and Al(87)Y(7)Fe(5)Cu. After measuring the EMFP and IMFP in a scanning transmission electron microscop...